Infineon FF1200R12IE5PBPSA1 Dual IGBT Module, 1.2 kA 1200 V, 10-Pin PRIME2

FF1200R12IE5PBPSA1 Infineon  Dual IGBT Module, 1.2 kA 1200 V, 10-Pin PRIME2
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Channel Type:
N
Maximum Continuous Collector Current:
1.2 kA
Maximum Gate Emitter Voltage:
20V
Package Type:
PRIME2
Configuration:
Dual
Pin Count:
10
Transistor Configuration:
Dual
RoHs Compliant
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This is Dual IGBT Module 1.2 kA 1200 V 10-Pin PRIME2 manufactured by Infineon. The manufacturer part number is FF1200R12IE5PBPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product is available in [Cannel Type] channel. The product has a maximum 1.2 ka continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of prime2. The product is available in dual configuration. It contains 10 pins. The product offers dual transistor configuration.

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Datasheet - FF1200R12IE5PBPSA1(Technical Reference)

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