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The Infineon IKB40N65ES5ATMA1 is a premium insulated-gate bipolar transistor IGBT tailored for power-switching tasks. Its optimised design ensures efficient energy conversion in various sectors, including industrial automation, automotive, renewable energy, and consumer electronics.
The Infineon IKB40N65ES5ATMA1 is a high-grade insulated-gate bipolar transistor designed to handle demanding power-switching applications. Its high current and voltage capabilities, optimised package design, and robust construction serve as a crucial component in achieving efficient energy conversion and power management across various applications.
The IKB40N65ES5ATMA1 IGBT finds applications in various industries, such as:
For more information please check the datasheets.
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