Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

IKB40N65EF5ATMA1 Infineon  IGBT, 74 A 650 V, 3-Pin PG-TO263-3
Infineon

Product Information

Maximum Power Dissipation:
250 W
Maximum Collector Emitter Voltage:
650 V
Maximum Continuous Collector Current:
74 A
Maximum Gate Emitter Voltage:
±20 V, ±30 V
Package Type:
PG-TO263-3
Pin Count:
3
RoHs Compliant
Checking for live stock

This is IGBT 74 A 650 V 3-Pin PG-TO263-3 manufactured by Infineon. The manufacturer part number is IKB40N65EF5ATMA1. Provides up to 250 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product has a maximum 74 a continuous collector current . It offers a maximum ±20 v, ±30 v gate emitter voltage . The package is a sort of pg-to263-3. It contains 3 pins.

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Datasheet-IKB40N65EF5ATMA1(Technical Reference)

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