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This is ON Semiconductor 3 Phase IGBT Module 35 A 650 V DIP26 Through Hole manufactured by onsemi. The manufacturer part number is NXH35C120L2C2ESG. The product is available in through hole configuration. Whereas features a 650 v of collector emitter voltage (max). It has 6 transistors . The product is available in [Cannel Type] channel. The product has a maximum 35 a continuous collector current . It offers a maximum ±20.0v gate emitter voltage . The package is a sort of dip26. The product is available in 3 phase configuration. The maximum collector current includes 35 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.4v @ 15v, 35a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -40°c ~ 150°c (tj) operating temperature range. It holds 8.333 nf @ 20 v of input capacitance. Moreover, the product comes in 26-powerdip module (1.199", 47.20mm). Its input values include three phase bridge rectifier. NTC Thermistor - yes. In addition, it is reach unaffected. The product is available in three phase inverter with brake configuration. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. In addition, 250 µa is the maximum current at collector cutoff. 26-dip is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 20 mw. Moreover, it corresponds to nxh35, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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