ON Semiconductor NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

NXH100B120H3Q0PTG ON Semiconductor  Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
onsemi

Product Information

Dimensions:
66.2 x 32.8 x 11.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
186 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Gate Emitter Voltage:
±20V
Package Type:
Q0BOOST
Minimum Operating Temperature:
-40 °C
Configuration:
Dual
Maximum Operating Temperature:
+150 °C
Pin Count:
22
Transistor Configuration:
Dual
RoHs Compliant
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This is ON Semiconductor Dual IGBT Module 1200 V 22-Pin Q0BOOST Surface Mount manufactured by onsemi. The manufacturer part number is NXH100B120H3Q0PTG. The given dimensions of the product include 66.2 x 32.8 x 11.9mm. The product is available in surface mount configuration. Provides up to 186 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. It offers a maximum ±20v gate emitter voltage . The package is a sort of q0boost. Whereas, the minimum operating temperature of the product is -40 °c. The product is available in dual configuration. It has a maximum operating temperature of +150 °c. It contains 22 pins. The product offers dual transistor configuration.

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Datasheet NXH100B120H3Q0PTG(Technical Reference)

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