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This is manufactured by onsemi. The manufacturer part number is FGA30N120FTDTU. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 339 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 208 nc gate charge. It has a trr (reverse recovery time) of 730 ns. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 339 w. Moreover, it corresponds to fga30n120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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