Automotive Standard:
AEC-Q101
Dimensions:
10.67 x 9.65 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
238 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2495pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
22.3mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80 A
Reverse Recovery Time (trr):
131 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
858µJ (on), 229µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
17.6ns/75.2ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
76 nC
REACH Status:
REACH Unaffected
edacadModel:
AFGB40T65SQDN Models
edacadModelUrl:
/en/models/9764707
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
24 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
160 A
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Power - Max:
238 W
Base Product Number:
AFGB40
ECCN:
EAR99
