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This is manufactured by onsemi. The manufacturer part number is NXH350N100H4Q2F2S1G. Provides up to 592 w maximum power dissipation. Whereas features a 1000 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 303 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of q2pack (pb-free/halide-free). The maximum collector current includes 303 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.3v @ 15v, 375a. The maximum collector emitter breakdown voltage of the product is 1000 v. The product has -40°c ~ 150°c (tj) operating temperature range. It holds 24.146 nf @ 20 v of input capacitance. Moreover, the product comes in module. Its input values include standard. NTC Thermistor - yes. In addition, it is reach unaffected. The product is available in three level inverter configuration. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. It has a long 16 weeks standard lead time. Features an IGBT trench field stop type. In addition, 1 ma is the maximum current at collector cutoff. The product is available in chassis mount configuration. 42-pim/q2pack (93x47) is the supplier device package value. The maximum power of the product is 276 w. Moreover, it corresponds to nxh350, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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