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This is IGBT 60 A 1300 V 3-Pin TO-3PN Through Hole manufactured by onsemi. The manufacturer part number is FGA30S120P. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 348 w maximum power dissipation. Whereas features a 1300 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.3v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 1300 v. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 78 nc gate charge. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 348 w. Moreover, it corresponds to fga30s120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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