onsemi FGAF20N60SMD IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

FGAF20N60SMD onsemi  IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
FGAF20N60SMD
FGAF20N60SMD
onsemi

Product Information

Dimensions:
15.7 x 3.2 x 26.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Voltage:
600 V
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PF
Pin Count:
3
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
40 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
12ns/91ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3 Full Pack
Gate Charge:
64 nC
Reverse Recovery Time (trr):
26.7 ns
title:
FGAF20N60SMD
REACH Status:
REACH Unaffected
Switching Energy:
452µJ (on), 141µJ (off)
Test Condition:
400V, 20A, 10Ohm, 15V
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
60 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PF
Packaging:
Tube
Power - Max:
75 W
Base Product Number:
FGAF20
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 40 A 600 V 3-Pin TO-3PF Through Hole manufactured by onsemi. The manufacturer part number is FGAF20N60SMD. The given dimensions of the product include 15.7 x 3.2 x 26.7mm. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pf. It contains 3 pins. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. The product offers single transistor configuration. The maximum collector current includes 40 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 1.7v @ 15v, 20a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 12ns/91ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3 full pack. Features 64 nc gate charge. It has a trr (reverse recovery time) of 26.7 ns. In addition, it is reach unaffected. Provide switching energy up to 452µj (on), 141µj (off). Test condition included 400v, 20a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 75 w. Moreover, it corresponds to fgaf20, a base product number of the product. The product is designated with the ear99 code number.

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FGAF20N60SMD, 600V 20A Field Stop IGBT Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev 21/Apr/2929(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 08/Jul/2021(PCN Obsolescence/ EOL)
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FGAF20N60SMD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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