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This is IGBT 30 A 600 V 3-Pin TO-220 Through Hole manufactured by onsemi. The manufacturer part number is NGTB15N60S1EG. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 117 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 30 a. It has a trr (reverse recovery time) of 270 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 1.7v @ 15v, 15a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 65ns/170ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 88 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 550µj (on), 350µj (off). Test condition included 400v, 15a, 22ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 117 w. Moreover, it corresponds to ngtb15, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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