onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

NGTB30N120LWG onsemi  IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
NGTB30N120LWG
NGTB30N120LWG
onsemi

Product Information

Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
260 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60 A
HTSUS:
8541.29.0095
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
136ns/360ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
420 nC
REACH Status:
REACH Unaffected
edacadModel:
NGTB30N120LWG Models
Switching Energy:
4.4mJ (on), 1mJ (off)
edacadModelUrl:
/en/models/4848578
Test Condition:
600V, 30A, 10Ohm, 15V
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
240 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
560 W
Base Product Number:
NGTB30
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 60 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is NGTB30N120LWG. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 260 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. Features 2.2v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 136ns/360ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 420 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 4.4mj (on), 1mj (off). Test condition included 600v, 30a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 560 w. Moreover, it corresponds to ngtb30, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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NGTB30N120LWG, IGBT(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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EOL 23/Dec/2016(PCN Obsolescence/ EOL)
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NGTB30N120LWG(Datasheets)

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