onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

FGH40T120SMD onsemi  IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
FGH40T120SMD
FGH40T120SMD
onsemi

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
555 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
2.7mJ (on), 1.1mJ (off)
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
40ns/475ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
370 nC
Reverse Recovery Time (trr):
65 ns
REACH Status:
REACH Unaffected
Test Condition:
600V, 40A, 10Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
21 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
555 W
Base Product Number:
FGH40
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 80 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is FGH40T120SMD. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 555 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 2.7mj (on), 1.1mj (off). Features 2.4v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 40ns/475ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 370 nc gate charge. It has a trr (reverse recovery time) of 65 ns. In addition, it is reach unaffected. Test condition included 600v, 40a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 21 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 555 w. Moreover, it corresponds to fgh40, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Multiple Parts 29/Jun/2022(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGH40T120SMD(F155)(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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