Dimensions:
10.67 x 11.33 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
298 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
35 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
23ns/165ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
100 nC
REACH Status:
REACH Unaffected
Switching Energy:
320µJ (on), 800µJ (off)
Test Condition:
960V, 10A, 10Ohm, 15V
Manufacturer:
onsemi
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
53 Weeks
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
80 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Power - Max:
298 W
Base Product Number:
HGT1S10
ECCN:
EAR99
