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This is IGBT 50 A 1200 V 3-Pin TO-3P Through Hole manufactured by onsemi. The manufacturer part number is FGA25N120ANTDTU. The given dimensions of the product include 15.8 x 5 x 18.9mm. The product is available in through hole configuration. Provides up to 312 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.65v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 50ns/190ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 200 nc gate charge. It has a trr (reverse recovery time) of 350 ns. In addition, it is reach unaffected. Provide switching energy up to 4.1mj (on), 960µj (off). Test condition included 600v, 25a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 312 w. Moreover, it corresponds to fga25n120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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