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This is IGBT manufactured by STMicroelectronics. The manufacturer part number is STGB50H65FB2. Provides up to 272 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 86 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). It contains 3 pins. The maximum collector current includes 86 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 28ns/115ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Features 151 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 910µj (on), 580µj (off). Test condition included 400v, 50a, 4.7ohm, 15v. The stmicroelectronics's product offers user-desired applications. It has a long 15 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in surface mount configuration. to-263 (d2pak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 272 w. Moreover, it corresponds to stgb50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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