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This is manufactured by ON Semiconductor. The manufacturer part number is NXH80T120L2Q0P2TG. The given dimensions of the product include 70.1 x 32.7 x 12.33mm. The product is available in surface mount configuration. Provides up to 158 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. It offers a maximum ±20v gate emitter voltage . The package is a sort of q0pack. Whereas, the minimum operating temperature of the product is -40 °c. It has a maximum operating temperature of +150 °c. It contains 20 pins. Base Part Number: nxh80. It features igbt module trench field stop three level inverter chassis mount 20-pim/q0pack (55x32.5). The product is available in three level inverter configuration. The product is available in chassis mount configuration. In addition, 250µa is the maximum current at collector cutoff. Features 1.75v @ 15v, 50a. 20-pim/q0pack (55x32.5) is the supplier device package value. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. Its input values include standard. Features an IGBT trench field stop type. NTC Thermistor - yes. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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