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This is manufactured by ON Semiconductor. The manufacturer part number is FGY75T95SQDT. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 434 w maximum power dissipation. Whereas features a 950 v of collector emitter voltage (max). The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 150a. It features igbt trench field stop 950v 150a 434w through hole to-247-3. Features 2.11v @ 15v, 75a. Td (on/off) value of 28.8ns/117ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 137nc gate charge. Base Part Number: fgy75. The maximum collector emitter breakdown voltage of the product is 950v. It has a trr (reverse recovery time) of 259ns. Provide switching energy up to 8.8mj (on), 3.2mj (off). Test condition included 600v, 75a, 4.7ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 434w.
For more information please check the datasheets.
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