DiodesZetex DGTD65T50S1PT IGBT, 100 A, 200 (Pulsed) A 650 V, 3-Pin TO-247

DGTD65T50S1PT DiodesZetex  IGBT, 100 A, 200 (Pulsed) A 650 V, 3-Pin TO-247
DiodesZetex

Product Information

Dimensions:
16.26 x 5.31 x 21.46mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Gate Capacitance:
4453pF
Maximum Continuous Collector Current:
100 A, 200 (Pulsed) A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-40 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 100 A 200 (Pulsed) A 650 V 3-Pin TO-247 manufactured by DiodesZetex. The manufacturer part number is DGTD65T50S1PT. The given dimensions of the product include 16.26 x 5.31 x 21.46mm. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . It has approximately 4453pf gate capacitance . The product has a maximum 100 a, 200 (pulsed) a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet DGTD65T50S1PT(Technical Reference)

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