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Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS

GT30J322-Q- Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS
Toshiba

Product Information

Dimensions:
15.8 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
30 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PNIS
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 30 A 600 V 3-Pin TO-3PNIS manufactured by Toshiba. The manufacturer part number is GT30J322(Q). The given dimensions of the product include 15.8 x 5 x 21mm. The product is available in through hole configuration. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pnis. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
Semi,Descrete,IGBT,(Technical Reference)

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