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650V 50A Field Stop Trench IGBT

RGW00TK65DGVC11 650V 50A Field Stop Trench IGBT
ROHM

Product Information

Maximum Continuous Collector Current:
26 A
Dimensions:
16 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
89 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
1.5 V
Number of Transistors:
1
Height:
21mm
Width:
5mm
Length:
16mm
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-3PFM
Minimum Operating Temperature:
-40 °C
Switching Speed:
1MHz
Channel Type:
N
Gate Capacitance:
4200pF
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is 650V 50A Field Stop Trench IGBT manufactured by ROHM. The manufacturer part number is RGW00TK65DGVC11. The product has a maximum 26 a continuous collector current . The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 89 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 1.5 v of collector emitter voltage (max). It has 1 transistors . In addition, the height is 21mm. Furthermore, the product is 5mm wide. Its accurate length is 16mm. It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. Whereas, the minimum operating temperature of the product is -40 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has approximately 4200pf gate capacitance . It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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