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Infineon IKZ75N65ES5XKSA1 P-channel IGBT, 80 A 650 V, 4-Pin TO-247

IKZ75N65ES5XKSA1 Infineon P-channel IGBT, 80 A 650 V, 4-Pin TO-247
Infineon

Product Information

Maximum Power Dissipation:
395 W
Maximum Collector Emitter Voltage:
1.42 V
Number of Transistors:
1
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
20V
Package Type:
PG-TO247-4
Configuration:
Single
RoHs Compliant
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This is P-channel IGBT 80 A 650 V 4-Pin TO-247 manufactured by Infineon. The manufacturer part number is IKZ75N65ES5XKSA1. Provides up to 395 w maximum power dissipation. Whereas features a 1.42 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 80 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of pg-to247-4. The product is available in single configuration.

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Datasheet - IKZ75N65ES5XKSA1(Technical Reference)

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You can order Infineon brand products with IKZ75N65ES5XKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
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