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This is P-channel IGBT 80 A 650 V 4-Pin TO-247 manufactured by Infineon. The manufacturer part number is IKZ50N65ES5XKSA1. The given dimensions of the product include 15.9 x 5.1 x 22.5mm. The product is available in through hole configuration. Provides up to 274 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 40khz switching speed . It has approximately 3100pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 4 pins. It has approximately 1.65mj energy rating . The product offers single transistor configuration.
For more information please check the datasheets.
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