Infineon IKW50N65H5FKSA1 IGBT, 80 A 650 V, 3-Pin TO-247

IKW50N65H5FKSA1 Infineon  IGBT, 80 A 650 V, 3-Pin TO-247
Infineon

Product Information

Maximum Power Dissipation:
305 W
Maximum Collector Emitter Voltage:
650 V
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
PG-TO247-3
RoHs Compliant
Checking for live stock

This is IGBT 80 A 650 V 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IKW50N65H5FKSA1. Provides up to 305 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of pg-to247-3.

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Datasheet - IKW50N65H5FKSA1(Technical Reference)

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