Infineon IKB10N60TATMA1 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263)

IKB10N60TATMA1 Infineon  IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263)
Infineon

Product Information

Maximum Power Dissipation:
110 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Maximum Continuous Collector Current:
30 A
Maximum Gate Emitter Voltage:
20V
Package Type:
TO-263-3
Configuration:
Single Collector, Single Emitter, Single Gate
RoHs Compliant
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This is IGBT 20 A 600 V 3-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IKB10N60TATMA1. Provides up to 110 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 30 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of to-263-3. The product is available in single collector, single emitter, single gate configuration.

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Datasheet - IKB10N60TATMA1(Technical Reference)

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