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Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A

RJH65D27BDPQ-A0-T2 Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A
RJH65D27BDPQ-A0#T2
Renesas Electronics

Product Information

Maximum Continuous Collector Current:
100 A
Dimensions:
15.94 x 5.02 x 21.13mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
650 V
Height:
21.13mm
Width:
5.02mm
Length:
15.94mm
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247A
Channel Type:
N
Gate Capacitance:
2850pF
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is IGBT 100 A 650 V 3-Pin TO-247A manufactured by Renesas Electronics. The manufacturer part number is RJH65D27BDPQ-A0#T2. The product has a maximum 100 a continuous collector current . The given dimensions of the product include 15.94 x 5.02 x 21.13mm. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 650 v of collector emitter voltage (max). In addition, the height is 21.13mm. Furthermore, the product is 5.02mm wide. Its accurate length is 15.94mm. It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247a. The product is available in [Cannel Type] channel. It has approximately 2850pf gate capacitance . It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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