ON Semiconductor FGB20N60SFD

FGB20N60SFD ON Semiconductor
FGB20N60SFD
FGB20N60SFD
ON Semiconductor

Product Information

Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
208 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
4 Weeks
Current - Collector (Ic) (Max):
40A
Detailed Description:
IGBT Field Stop 600V 40A 208W Surface Mount D²PAK
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 20A
Td (on/off) @ 25°C:
13ns/90ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
65nC
Base Part Number:
FGB2
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
34ns
Switching Energy:
370µJ (on), 160µJ (off)
Test Condition:
400V, 20A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
60A
Mounting Type:
Surface Mount
Supplier Device Package:
D²PAK
Packaging:
Cut Tape (CT)
Power - Max:
208W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGB20N60SFD. The given dimensions of the product include 10.67 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 208 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 4 weeks of manufacturer standard lead time. The maximum collector current includes 40a. It features igbt field stop 600v 40a 208w surface mount d²pak. Features 2.8v @ 15v, 20a. Td (on/off) value of 13ns/90ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features 65nc gate charge. Base Part Number: fgb2. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 34ns. Provide switching energy up to 370µj (on), 160µj (off). Test condition included 400v, 20a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . d²pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 208w.

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FGB20N60SFD, 600V, 20A Field Stop IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGB20N60SFD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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