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This is manufactured by ON Semiconductor. The manufacturer part number is FGA50N100BNTDTU. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 63 w maximum power dissipation. Whereas features a 1000 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 275nc gate charge. Base Part Number: fga50n100. It features igbt npt and trench 1000v 50a 156w through hole to-3p. It has a trr (reverse recovery time) of 1.5µs. The maximum collector current includes 50a. Features 2.9v @ 15v, 60a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1000v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 156w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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