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This is manufactured by ON Semiconductor. The manufacturer part number is FGA30N120FTDTU. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 339 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 208nc gate charge. Base Part Number: fga30n120. It features igbt trench field stop 1200v 60a 339w through hole to-3pn. It has a trr (reverse recovery time) of 730ns. The maximum collector current includes 60a. Features 2v @ 15v, 30a. to-3pn is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 339w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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