Infineon IRGS30B60KPBF IGBT, 78 A 600 V, 3-Pin D2PAK (TO-263)

IRGS30B60KPBF Infineon  IGBT, 78 A 600 V, 3-Pin D2PAK (TO-263)
IRGS30B60KPBF
Infineon

Product Information

Dimensions:
10.67 x 4.83 x 11.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
370 W
Maximum Continuous Collector Current:
78 A
Maximum Collector Emitter Voltage:
600 V
Height:
11.3mm
Width:
4.83mm
Length:
10.67mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 78 A 600 V 3-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IRGS30B60KPBF. The given dimensions of the product include 10.67 x 4.83 x 11.3mm. The product is available in surface mount configuration. Provides up to 370 w maximum power dissipation. The product has a maximum 78 a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 11.3mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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IRGB30B60KPbF / IRGS30B60KPbF / IRGSL30B60KPbF, Insulated Gate Bipolar Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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