GT40QR21,F(O Toshiba IGBT, 40 A 1200 V, 3-Pin TO-3P

Enrgtech Part No: ET14050101
|
Manufacturer Part No:
GT40QR21,F(O
|
Manufacturer: Toshiba

GT40QR21-F-O GT40QR21,F(O Toshiba IGBT, 40 A 1200 V, 3-Pin TO-3P

Product Information

Dimensions:

15.5 x 4.5 x 20mm

Mounting Type:

Through Hole

Maximum Power Dissipation:

230 W

Maximum Collector Emitter Voltage:

1200 V

Channel Type:

Maximum Continuous Collector Current:

40 A

Maximum Gate Emitter Voltage:

±25V

Package Type:

TO-3P

Switching Speed:

2.5MHz

Gate Capacitance:

1500pF

Maximum Operating Temperature:

175 °C

Pin Count:

Checking for live stock

This is IGBT 40 A 1200 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT40QR21,F(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 2.5mhz switching speed . It has approximately 1500pf gate capacitance . It has a maximum operating temperature of 175 °c. It contains 3 pins. It has approximately 0.29mj energy rating . The product offers single transistor configuration.

GT40QR21, Silicon N-Channel IGBT(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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GT40QR21,F(O Toshiba IGBT, 40 A 1200 V, 3-Pin TO-3P

GT40QR21,F(O

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