Fuji Electric 7MBR50VB-120-50, M712 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Through Hole
Product Information
Dimensions:
122 x 62 x 17mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
280 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
M712
Configuration:
3 Phase Bridge
Maximum Operating Temperature:
+150 °C
Pin Count:
24
Transistor Configuration:
3 Phase
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Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Fuji Electric 7MBR50VB-120-50, M712 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Through Hole. You can also check on our website or by contacting our customer support team for further order details on Fuji Electric 7MBR50VB-120-50, M712 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Through Hole.
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Yes. We ship 7MBR50VB-120-50 Internationally to many countries around the world.
This is M712 3 Phase Bridge IGBT Module 50 A max 1200 V Through Hole manufactured by Fuji Electric. The manufacturer part number is 7MBR50VB-120-50. The given dimensions of the product include 122 x 62 x 17mm. The product is available in through hole configuration. Provides up to 280 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of m712. The product is available in 3 phase bridge configuration. It has a maximum operating temperature of +150 °c. It contains 24 pins. The product offers 3 phase transistor configuration.
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