Name: GT50NR21,Q(O, Toshiba
Brand: Toshiba
SKU: ET13941579
Price: 1.83 GBP
Availability: PreOrder

GT50NR21-Q-O Toshiba GT50NR21,Q(O IGBT, 50 A 1050 V, 3-Pin TO-3P

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Product Information

Maximum Continuous Collector Current:

50 A

Dimensions:

15.5 x 4.5 x 20mm

Mounting Type:

Through Hole

Maximum Power Dissipation:

230 W

Maximum Operating Temperature:

175 °C

Maximum Collector Emitter Voltage:

1050 V

Height:

20mm

Width:

4.5mm

Length:

15.5mm

Maximum Gate Emitter Voltage:

±25V

Package Type:

TO-3P

Switching Speed:

0.45µs

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This is IGBT 50 A 1050 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50NR21,Q(O. The product has a maximum 50 a continuous collector current . The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. It has a maximum operating temperature of 175 °c. Whereas features a 1050 v of collector emitter voltage (max). In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 0.45µs switching speed . The product is available in [Cannel Type] channel. It has approximately 1500pf gate capacitance . It contains 3 pins. The product offers single transistor configuration.

GT50NR21, Silicon N-Channel IGBT(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Toshiba GT50NR21,Q(O IGBT, 50 A 1050 V, 3-Pin TO-3P

GT50NR21,Q(O

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