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Toshiba GT50NR21,Q(O IGBT, 50 A 1050 V, 3-Pin TO-3P

GT50NR21-Q-O Toshiba GT50NR21,Q(O IGBT, 50 A 1050 V, 3-Pin TO-3P
GT50NR21,Q(O
Toshiba

Product Information

Maximum Continuous Collector Current:
50 A
Dimensions:
15.5 x 4.5 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Maximum Operating Temperature:
175 °C
Maximum Collector Emitter Voltage:
1050 V
Height:
20mm
Width:
4.5mm
Length:
15.5mm
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Switching Speed:
0.45µs
Channel Type:
N
Gate Capacitance:
1500pF
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 50 A 1050 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50NR21,Q(O. The product has a maximum 50 a continuous collector current . The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. It has a maximum operating temperature of 175 °c. Whereas features a 1050 v of collector emitter voltage (max). In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 0.45µs switching speed . The product is available in [Cannel Type] channel. It has approximately 1500pf gate capacitance . It contains 3 pins. The product offers single transistor configuration.

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GT50NR21, Silicon N-Channel IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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