Infineon IRGS10B60KDPBF IGBT, 22 A 600 V, 3-Pin D2PAK (TO-263)

IRGS10B60KDPBF Infineon  IGBT, 22 A 600 V, 3-Pin D2PAK (TO-263)
Infineon

Product Information

Maximum Continuous Collector Current:
22 A
Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
156 W
Maximum Operating Temperature:
+150 °C
Maximum Collector Emitter Voltage:
600 V
Height:
4.83mm
Width:
9.65mm
Length:
10.67mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Energy Rating:
804µJ
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Channel Type:
N
Gate Capacitance:
620pF
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is IGBT 22 A 600 V 3-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IRGS10B60KDPBF. The product has a maximum 22 a continuous collector current . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 156 w maximum power dissipation. It has a maximum operating temperature of +150 °c. Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.67mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). It has approximately 804µj energy rating . Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has approximately 620pf gate capacitance . It contains 3 pins. The product offers single transistor configuration.

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IRGB10B60KDPbF, IRGS10B60KDPbF, IRGSL10B60KDPbF, IGBT with Ultrafast Soft Recovery Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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