Infineon IRG8P50N120KDPBF IGBT, 80 A 1200 V, 3-Pin TO-247AC

IRG8P50N120KDPBF Infineon  IGBT, 80 A 1200 V, 3-Pin TO-247AC
IRG8P50N120KDPBF
IRG8P50N120KDPBF
ET13824457
ET13824457
IGBTs
IGBTs
Infineon

Product Information

Dimensions:
15.87 x 5.31 x 20.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
350 W
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
1200 V
Height:
20.7mm
Width:
5.31mm
Length:
15.87mm
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247AC
Energy Rating:
0.52mJ
Minimum Operating Temperature:
-40 °C
Switching Speed:
8 → 30kHz
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 80 A 1200 V 3-Pin TO-247AC manufactured by Infineon. The manufacturer part number is IRG8P50N120KDPBF. The given dimensions of the product include 15.87 x 5.31 x 20.7mm. The product is available in through hole configuration. Provides up to 350 w maximum power dissipation. The product has a maximum 80 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 20.7mm. Furthermore, the product is 5.31mm wide. Its accurate length is 15.87mm. It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247ac. It has approximately 0.52mj energy rating . Whereas, the minimum operating temperature of the product is -40 °c. It has about 8 → 30khz switching speed . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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IRG8P50N120KDPbF, IRG8P50N120KD-EPbF, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 1200V 50A(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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