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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N120LWG. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 260 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 420nc gate charge. Base Part Number: ngtb30. It features igbt trench field stop 1200v 60a 560w through hole to-247. The maximum collector current includes 60a. Features 2.2v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 4.4mj (on), 1mj (off). Td (on/off) value of 136ns/360ns. The maximum power of the product is 560w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT trench field stop type. Test condition included 600v, 30a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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