STMicroelectronics STGP10M65DF2

STGP10M65DF2 STMicroelectronics
STGP10M65DF2
STGP10M65DF2
STMicroelectronics

Product Information

Dimensions:
10.4 x 4.6 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
115 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-220
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
840pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
0.66mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
20 A
Reverse Recovery Time (trr):
96 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
19ns/91ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3
Gate Charge:
28 nC
REACH Status:
REACH Unaffected
edacadModel:
STGP10M65DF2 Models
Switching Energy:
120µJ (on), 270µJ (off)
edacadModelUrl:
/en/models/5305267
Test Condition:
400V, 10A, 22Ohm, 15V
Manufacturer:
STMicroelectronics
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
40 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
115 W
Base Product Number:
STGP10
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STGP10M65DF2. The given dimensions of the product include 10.4 x 4.6 x 15.75mm. The product is available in through hole configuration. Provides up to 115 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 840pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 0.66mj energy rating . The product offers single transistor configuration. The maximum collector current includes 20 a. It has a trr (reverse recovery time) of 96 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 10a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 19ns/91ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 28 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 120µj (on), 270µj (off). Test condition included 400v, 10a, 22ohm, 15v. The stmicroelectronics's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 15 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 115 w. Moreover, it corresponds to stgp10, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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STGP10M65DF2, Trench Gate Field-Stop IGBT, M Series 650V, 10A Low Loss(Technical Reference)
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STGP10M65DF2(Datasheets)

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