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STMicroelectronics STGWT80H65DFB

STGWT80H65DFB STMicroelectronics
STGWT80H65DFB
STMicroelectronics

Product Information

Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
469 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
120 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3P
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
120 A
Reverse Recovery Time (trr):
85 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
84ns/280ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
414 nC
title:
STGWT80H65DFB
REACH Status:
REACH Unaffected
edacadModel:
STGWT80H65DFB Models
Switching Energy:
2.1mJ (on), 1.5mJ (off)
edacadModelUrl:
/en/models/4552308
Test Condition:
400V, 80A, 10Ohm, 15V
Manufacturer:
STMicroelectronics
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
240 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Packaging:
Tube
Power - Max:
469 W
Base Product Number:
STGWT80
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STGWT80H65DFB. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 469 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It has a trr (reverse recovery time) of 85 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 80a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 84ns/280ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 414 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 2.1mj (on), 1.5mj (off). Test condition included 400v, 80a, 10ohm, 15v. The stmicroelectronics's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 15 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 469 w. Moreover, it corresponds to stgwt80, a base product number of the product. The product is designated with the ear99 code number.

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STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB, Trench Gate Field-Stop IGBT, HB Series 650V, 80A High Speed(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IGBT/IPM TFS A/T Add 22/Oct/2021(PCN Assembly/Origin)
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STGW80H65DFB, STGWT80H65DFB(Datasheets)

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Yes. We ship STGWT80H65DFB Internationally to many countries around the world.
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