IXYS IXXH80N65B4H1

IXXH80N65B4H1 IXYS
IXXH80N65B4H1
IXXH80N65B4H1
IXYS

Product Information

Dimensions:
16.1 x 5.2 x 21.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
430 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247AD
Minimum Operating Temperature:
-55 °C
Switching Speed:
5 → 30kHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
5.2mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
160 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
3.77mJ (on), 1.2mJ (off)
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
38ns/120ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
120 nC
Reverse Recovery Time (trr):
150 ns
REACH Status:
REACH Unaffected
Test Condition:
400V, 80A, 3Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
98 Weeks
IGBT Type:
PT
Current - Collector Pulsed (Icm):
430 A
Mounting Type:
Through Hole
Series:
GenX4™, XPT™
Supplier Device Package:
TO-247AD (IXXH)
Power - Max:
625 W
Base Product Number:
IXXH80
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXXH80N65B4H1. The given dimensions of the product include 16.1 x 5.2 x 21.3mm. The product is available in through hole configuration. Provides up to 625 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 430 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247ad. Whereas, the minimum operating temperature of the product is -55 °c. It has about 5 → 30khz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 5.2mj energy rating . The product offers single transistor configuration. The maximum collector current includes 160 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 3.77mj (on), 1.2mj (off). Features 2v @ 15v, 80a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 38ns/120ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 120 nc gate charge. It has a trr (reverse recovery time) of 150 ns. In addition, it is reach unaffected. Test condition included 400v, 80a, 3ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 98 weeks standard lead time. Features an IGBT pt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product genx4™, xpt™, is a highly preferred choice for users. to-247ad (ixxh) is the supplier device package value. The maximum power of the product is 625 w. Moreover, it corresponds to ixxh80, a base product number of the product. The product is designated with the ear99 code number.

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IXXH80N65B4H1, XPT 650V IGBT GenX4 with Sonic Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IXXH80N65B4H1(Datasheets)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11539071 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11539071.
Yes. We ship IXXH80N65B4H1 Internationally to many countries around the world.