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This is manufactured by STMicroelectronics. The manufacturer part number is STGWT80H65FB. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 469 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 80a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 84ns/280ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 414 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 2.1mj (on), 1.5mj (off). Test condition included 400v, 80a, 10ohm, 15v. The stmicroelectronics's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 469 w. Moreover, it corresponds to stgwt80, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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