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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB40N120FL2WG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 535 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80a. It features igbt trench field stop 1200v 80a 535w through hole to-247. Features 2.4v @ 15v, 40a. Td (on/off) value of 116ns/286ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 313nc gate charge. Base Part Number: ngtb40. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 240ns. Provide switching energy up to 3.4mj (on), 1.1mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 535w.
For more information please check the datasheets.
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