Infineon Technologies BSM75GB170DN2HOSA1

Infineon Technologies

Product Information

Current - Collector (Ic) (Max):
110 A
HTSUS:
8541.29.0095
Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
1700 V
Operating Temperature:
150°C (TJ)
Input Capacitance (Cies) @ Vce:
11 nF @ 25 V
Package / Case:
Module
Input:
Standard
NTC Thermistor:
No
title:
BSM75GB170DN2HOSA1
REACH Status:
REACH Unaffected
Configuration:
Half Bridge
Manufacturer:
Infineon Technologies
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
-
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Module
Packaging:
Tray
Power - Max:
625 W
Base Product Number:
BSM75G
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BSM75GB170DN2HOSA1. The maximum collector current includes 110 a. It is assigned with possible HTSUS value of 8541.29.0095. Features 3.9v @ 15v, 75a. The maximum collector emitter breakdown voltage of the product is 1700 v. The product has 150°c (tj) operating temperature range. It holds 11 nf @ 25 v of input capacitance. Moreover, the product comes in module. Its input values include standard. NTC Thermistor - no. In addition, it is reach unaffected. The product is available in half bridge configuration. The infineon technologies's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). The product is available in chassis mount configuration. module is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 625 w. Moreover, it corresponds to bsm75g, a base product number of the product. The product is designated with the ear99 code number.

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BSM75GB170DN2(Datasheets)

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FAQs

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Yes. We ship BSM75GB170DN2HOSA1 Internationally to many countries around the world.