Fuji Electric 7MBR75VB-120-50, M712 3 Phase Bridge IGBT Module, 75 A max, 1200 V, Through Hole

7MBR75VB-120-50 Fuji Electric , M712 3 Phase Bridge IGBT Module, 75 A max, 1200 V, Through Hole
Fuji Electric

Product Information

Dimensions:
122 x 62 x 17mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
385 W
Maximum Continuous Collector Current:
75 A
Maximum Collector Emitter Voltage:
1200 V
Configuration:
3 Phase Bridge
Height:
17mm
Width:
62mm
Length:
122mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
M712
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
24
Transistor Configuration:
3 Phase
RoHs Compliant
Checking for live stock

This is M712 3 Phase Bridge IGBT Module 75 A max 1200 V Through Hole manufactured by Fuji Electric. The manufacturer part number is 7MBR75VB-120-50. The given dimensions of the product include 122 x 62 x 17mm. The product is available in through hole configuration. Provides up to 385 w maximum power dissipation. The product has a maximum 75 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). The product is available in 3 phase bridge configuration. In addition, the height is 17mm. Furthermore, the product is 62mm wide. Its accurate length is 122mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of m712. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 24 pins. The product offers 3 phase transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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