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This is M636 3 Phase Bridge IGBT Module 75 A max 1200 V Through Hole manufactured by Fuji Electric. The manufacturer part number is 6MBI75VA-120-50. It has a priced to clear feature yes . The given dimensions of the product include 107.5 x 45 x 17mm. The product is available in through hole configuration. Provides up to 385 w maximum power dissipation. The product has a maximum 75 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). The product is available in 3 phase bridge configuration. In addition, the height is 17mm. Furthermore, the product is 45mm wide. Its accurate length is 107.5mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of m636. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 28 pins. The product offers 3 phase transistor configuration.
For more information please check the datasheets.
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