Rohm Semiconductor BD2320EFJ-LAE2

BD2320EFJ-LAE2 Rohm Semiconductor
BD2320EFJ-LAE2
Rohm Semiconductor

Product Information

HTSUS:
8542.39.0001
RoHS Status:
ROHS3 Compliant
DigiKey Programmable:
Not Verified
Operating Temperature:
-40°C ~ 125°C (TA)
Input Type:
Non-Inverting
Package / Case:
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Current - Peak Output (Source, Sink):
3.5A, 4.5A
Rise / Fall Time (Typ):
8ns, 6ns
REACH Status:
REACH Unaffected
Gate Type:
N-Channel MOSFET
Package:
Tape & Reel (TR)
Channel Type:
Independent
Moisture Sensitivity Level (MSL):
1 (Unlimited)
High Side Voltage - Max (Bootstrap):
100 V
Logic Voltage - VIL, VIH:
1.7V, 1.5V
standardLeadTime:
20 Weeks
Driven Configuration:
High-Side and Low-Side
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HTSOP-J
Number of Drivers:
2
Voltage - Supply:
7.5V ~ 14.5V
Base Product Number:
BD2320
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is BD2320EFJ-LAE2. It is assigned with possible HTSUS value of 8542.39.0001. The product is rohs3 compliant. The product has -40°c ~ 125°c (ta) operating temperature range. It carries non-inverting input type. Moreover, the product comes in 8-soic (0.154", 3.90mm width) exposed pad. Features a peak output current of 3.5a, 4.5a. The typical rise and fall time of the product is 8ns, 6ns. In addition, it is reach unaffected. It is a n-channel mosfet gate. It is shipped in tape & reel (tr) package . The product is available in [Cannel Type] channel. Its typical moisture sensitivity level is 1 (unlimited). The maximum high side voltage is 100 v . Logic voltage of 1.7v, 1.5v. It has a long 20 weeks standard lead time. It has a high-side and low-side driven configuration. The product is available in surface mount configuration. 8-htsop-j is the supplier device package value. Number of Drivers equals 2. It has optimum voltage supply of 7.5v ~ 14.5v. Moreover, it corresponds to bd2320, a base product number of the product. The product is designated with the ear99 code number.

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