Toshiba TC58NVG0S3EBAI4, Parallel 1 Gbyte Flash Memory, 25ns; 3V, 63-Pin TFBGA

TC58NVG0S3EBAI4 Toshiba , Parallel 1 Gbyte Flash Memory, 25ns; 3V, 63-Pin TFBGA
TC58NVG0S3EBAI4
Toshiba

Product Information

Dimensions:
11 x 9 x 0.74mm
Mounting Type:
Surface Mount
Number of Words:
128M
Block Organisation:
Symmetrical
Organisation:
128M x 8
Minimum Operating Supply Voltage:
-0.6 V
Number of Bits per Word:
8bit
Cell Type:
NAND
Width:
9mm
Length:
11mm
Memory Size:
1 Gbyte
Package Type:
TFBGA
Interface Type:
Parallel
Minimum Operating Temperature:
-40 °C
Maximum Random Access Time:
25ns
Maximum Operating Supply Voltage:
4.6 V
Height:
0.74mm
Maximum Operating Temperature:
+85 °C
Pin Count:
63
RoHs Compliant
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This is Parallel 1 Gbyte Flash Memory 25ns; 3V 63-Pin TFBGA manufactured by Toshiba. The manufacturer part number is TC58NVG0S3EBAI4. The given dimensions of the product include 11 x 9 x 0.74mm. The product is available in surface mount configuration. It has 128m words . Moreover, it has a/an symmetrical organisation block . The product has 128m x 8 organisation configuration. While its minimum operating supply voltage is -0.6 v. It exhibits 8bit per word . It has a nand type cell . Furthermore, the product is 9mm wide. Its accurate length is 11mm. It holds a typical memory size of 1 gbyte. The package is a sort of tfbga. It is a type of parallel interface. Whereas, the minimum operating temperature of the product is -40 °c. The product exhibits a maximum 25ns random access time . It has 4.6 v maximum operating supply voltage. In addition, the height is 0.74mm. It has a maximum operating temperature of +85 °c. It contains 63 pins.

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Datasheet(Technical Reference)

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