FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Rds On (Max) @ Id, Vgs:
35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
title:
G18NP06Y
Vgs(th) (Max) @ Id:
2.5V @ 250µA, 3.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Configuration:
N and P-Channel, Common Drain
Manufacturer:
Goford Semiconductor
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Qualification:
-
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 30V, 2610pF @ 30V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V, 25nC @ 10V
Supplier Device Package:
TO-252-4
Packaging:
Tape & Reel (TR)
Power - Max:
45W (Tc), 50W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
