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This is manufactured by onsemi. The manufacturer part number is NXH011F120M3F2PTHG. The FET features of the product include silicon carbide (sic). The product is rohs3 compliant. The product has -40°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 16mohm @ 100a, 18v. The maximum gate charge and given voltages include 284nc @ 18v. The typical Vgs (th) (max) of the product is 4.4v @ 60ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 105a (tc). The product is available in 4 n-channel (full bridge) configuration. The onsemi's product offers user-desired applications. The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is not applicable. It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 6211.6pf @ 800v. The product is available in chassis mount configuration. 34-pim (56.7x42.5) is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 244w (tj). This product use silicon carbide (sic) technology.
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