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This is manufactured by Qorvo. The manufacturer part number is UHB50SC12E1BC3N. The FET features of the product include silicon carbide (sic). The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 24mohm @ 50a, 12v. The typical Vgs (th) (max) of the product is 6v @ 20ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 69a (tj). The product is available in 2 p-channel (half bridge) configuration. The qorvo's product offers user-desired applications. The product has a 1200v (1.2kv) drain to source voltage. It has a long 44 weeks standard lead time. The product's input capacitance at maximum includes 2930pf @ 800v. The product is available in chassis mount configuration. The maximum gate charge and given voltages include 85nc @ 15v. module is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 208w (tc). This product use sicfet (silicon carbide) technology.
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