FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V, 150nC @ 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.9V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Manufacturer:
Alpha & Omega Semiconductor Inc.
Drain to Source Voltage (Vdss):
30V
Qualification:
-
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1070pF @ 15V, 5550pF @ 15V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
8-DFN (5x6)
Packaging:
Tape & Reel (TR)
Power - Max:
4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
AONX363
ECCN:
EAR99
